Hydrostatic pressure dependence of the exponential optical absorption in CdInGaS₄TOYODA, T; NAKANISHI, H; ENDO, S et al.Journal of applied physics. 1987, Vol 61, Num 1, pp 434-436, issn 0021-8979Article

A METHOD OF MEASUREMENT OF THE REFRACTIVE INDICES OF CRYSTALS WITH LAYERED STRUCTUREALLAKHVERDIEV KR; GULIEV RI; KULEVSKII LA et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 60; NO 1; PP. 309-312; ABS. GER; BIBL. 4 REF.Article

Optical properties of Cd₃InGaS₆IRIE, T; ENDO, S; KUROGANE, H et al.Japanese journal of applied physics. 1986, Vol 25, Num 6, pp 922-923, issn 0021-4922, 1Article

Localized levels parameters in CdInGaS₄ single crystals as determined by photoconductivity measurementsKAROUTIS, A. D; ANAGNOSTOPOULOS, A. N.Materials research bulletin. 1991, Vol 26, Num 7, pp 675-691, issn 0025-5408Article

Time-resolved luminescence of CdGaInS₄ under pulsed laser excitation at 30 KCOLOCCI, M; FERMI, F; QUERZOLI, R et al.Physica status solidi. B. Basic research. 1986, Vol 133, Num 1, pp 379-388, issn 0370-1972Article

Preparation and optical investigation of the CdInGaS₄ compoundKAMBAS, K.Physica status solidi. A. Applied research. 1983, Vol 76, Num 2, pp 735-741, issn 0031-8965Article

VUV Reflection spectra and fundamental optical constants of CdIn₂S₄, CdInGaS₄, Cd₃InGaS₆ single crystalsTAKIZAWA, T; OHWADA, H; KOBAYASHI, H et al.Solid state communications. 1988, Vol 67, Num 7, pp 739-743, issn 0038-1098Article

Cation mixing and the AC conductivity of CdInGaS₄ANAGNOSTOPOULOS, A. N; KAROUTIS, A.Physica status solidi. A. Applied research. 1983, Vol 79, Num 1, pp K29-K33, issn 0031-8965Article

Study on the crystallographic and photoluminescent properties of Cd₃InGaS₆. I : Crystallography studyIRIE, T; ANDO, S; NODA, Y et al.Japanese journal of applied physics. 1992, Vol 31, Num 8, pp 2508-2513, issn 0021-4922, 1Article

Green emission in CdS/CdInGaS₄ANDO, S; ENDO, S; NAKANISHI, H et al.Japanese journal of applied physics. 1991, Vol 30, Num 10, pp 2540-2541, issn 0021-4922, 1Article

Hydrostatic pressure dependence of the fundamental absorption edges of CdInGaS₄ and ZnIn₂S₄TOYODA, T; SORAZAWA, M; NAKANISHI, H et al.Japanese journal of applied physics. 1992, Vol 32, pp 291-293, issn 0021-4922, SUP1Conference Paper

Comparison of the structure and the electric properties of ZnIn₂S₄(III)- and CdInGaS₄-layered crystalsANAGNOSTOPOULOS, A. N; MANOLIKAS, C; PAPADOPOULOS, D et al.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp 595-601, issn 0031-8965Article

A Raman study of compositional disorder in defect chalcopyritesRAZZETTI, C; LOTTICI, P. P; ZANOTTI, L et al.Physica status solidi. B. Basic research. 1983, Vol 118, Num 2, pp 743-749, issn 0370-1972Article

On the optical absorption edge in the CdInGaS₄ layered compound at low temperaturesKAMBAS, K; ANAGNOSTOPOULOS, A; PLOSS, B et al.Physica status solidi. A. Applied research. 1986, Vol 95, Num 2, pp K139-K144, issn 0031-8965Article

Direct optical transitions in CdGaInS₄MOLDOVYAN, N. A; RADAUTSAN, S. I; ZHITAR, V. F et al.Physica status solidi. A. Applied research. 1988, Vol 106, Num 2, pp K181-K184, issn 0031-8965Article

Investigation of photoconductivity sensitising centres in CdGaInS₄ layered crystalsTARRICONE, L; ZANOTTI, L; FILIPOWICZ, J et al.Journal of physics. D, Applied physics (Print). 1987, Vol 20, Num 5, pp 653-659, issn 0022-3727Article

Exponential absorption edge in the semiconductor CdInGaS₄ at high temperatureTOYODA, T; NAKANISHI, H; ENDO, S et al.Journal of physics. D, Applied physics (Print). 1986, Vol 19, Num 2, pp L21-L24, issn 0022-3727Article

Electrical effects associated with the ordering process in CdInGaS₄ crystals. II: Electron traps determined with conductivity measurementsANAGNOSTOPOULOS, A. N; MANOLIKAS, C; KAROUTIS, A et al.Physica status solidi. A. Applied research. 1985, Vol 92, Num 1, pp 231-235, issn 0031-8965Article

Temperature dependence of the thermal expansion of semiconductors CdIn₂S₄ and CdInGaS₄TOYODA, T; IRIE, T; ENDO, S et al.Journal of applied physics. 1987, Vol 62, Num 2, pp 732-734, issn 0021-8979Article

Optical absorption and recombination processes in CdGaInS₄ layered crystalsTARRICONE, L; GRILLI, E; GUZZI, M et al.Physica status solidi. A. Applied research. 1985, Vol 92, Num 2, pp 595-602, issn 0031-8965Article